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PDF BF1208D Data sheet ( Hoja de datos )
| Número de pieza | BF1208D | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BF1208D
Dual N-channel dual gate MOSFET
Rev. 01 — 16 May 2007
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
I Internal switch to save external components
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
20
ID
(mA)
16
12
8
(4)
4
(5)
(6)
001aag356
(1)
(2)
(3)
0
012345
VGG (V)
(1) ID(B); RG1 = 68 kΩ.
(2) ID(B); RG1 = 86 kΩ.
(3) ID(B); RG1 = 100 kΩ.
(4) ID(A); RG1 = 100 kΩ.
(5) ID(A); RG1 = 86 kΩ.
(6) ID(A); RG1 = 68 kΩ.
Fig 2. Drain currents of MOSFET A and B as a
function of VGG
8. Dynamic characteristics
G1A
G2
G1B
RG1
VGG
DA
S
DB
001aac205
VGG = 5 V: amplifier A is off; amplifier B is on.
VGG = 0 V: amplifier A is on; amplifier B is off.
Fig 3. Functional diagram
8.1 Dynamic characteristics for amplifier A
Table 8. Dynamic characteristics for amplifier A[1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
f = 100 MHz; Tj = 25 °C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
26
[2] -
[2] -
[2] -
[2] -
Gtr transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32
f = 400 MHz; GS = 2 mS; GL = 1 mS
28
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
24
NF noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
-
f = 400 MHz; YS = YS(opt)
-
f = 800 MHz; YS = YS(opt)
-
Typ
31
2.1
3.4
0.8
30
36
32
28
3.0
0.9
1.1
Max Unit
41 mS
2.6 pF
- pF
- pF
- fF
40 dB
36 dB
33 dB
- dB
1.5 dB
1.7 dB
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
5 of 22
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 11. Dynamic characteristics for amplifier B[1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance f = 100 MHz; Tj = 25 °C
input capacitance at gate1 f = 100 MHz
25
[2] -
input capacitance at gate2 f = 100 MHz
[2] -
output capacitance
f = 100 MHz
[2] -
reverse transfer capacitance f = 100 MHz
[2] -
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
31
f = 400 MHz; GS = 2 mS; GL = 1 mS
28
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
26
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
-
-
cross modulation
f = 800 MHz; YS = YS(opt)
-
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [3]
at 0 dB AGC
90
30
2.1
3.4
0.85
30
35
32
30
3
1.1
1.4
-
at 10 dB AGC
- 90
at 20 dB AGC
- 98
at 40 dB AGC
102 105
Max Unit
40 mS
2.6 pF
- pF
- pF
- fF
39 dB
36 dB
34 dB
- dB
1.7 dB
2.0 dB
- dBµV
- dBµV
- dBµV
- dBµV
[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2] Calculated from S-parameters.
[3] Measured in Figure 34 test circuit.
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
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| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet BF1208D.PDF ] | |
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