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NXP Semiconductors - NPN 14 GHz wideband transistor

Numéro de référence BFG310XR
Description NPN 14 GHz wideband transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BFG310XR fiche technique
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BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
s High power gain
s Low noise figure
s High transition frequency
s Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCBO collector-base voltage
VCEO
IC
collector-emitter voltage
collector current (DC)
Ptot total power dissipation
hFE DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Conditions
open emitter
open base
Tsp 145 °C
IC = 5 mA; VCE = 3 V;
Tj = 25 °C
VCB = 5 V; f = 1 MHz;
emitter grounded
IC = 5 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 °C
Min Typ Max Unit
- - 15 V
- - 6V
- - 10 mA
[1] - - 60 mW
60 100 200
- 0.17 0.3 pF
- 14 - GHz

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