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PDF LN151 Data sheet ( Hoja de datos )
| Número de pieza | LN151 | |
| Descripción | GaAs Infrared Light Emitting Diodes | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LN151 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems
Features
High-power output, high-efficiency : PO = 7.5 mW (typ.)
Fast response and high-speed modulation capability :
tr, tf = 1 µs (typ.)
Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
Narrow directivity, suitable for effective use of radiant power
(LN151L)
Wide directivity, matched for external optical systems (LN151F)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 160
IF 100
IFP* 2
VR 3
Topr –25 to +100
Tstg –30 to+100
Unit
mW
mA
A
V
˚C
˚C
LN151F
ø4.6±0.15
Unit : mm
Glass window
2-ø0.45±0.05
2.54±0.25
21
ø5.75 max.
1: Anode
2: Cathode
LN151L
ø4.6±0.15
Unit : mm
Glass lens
2-ø0.45 ± 0.05
2.54±0.25
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Radiant power
Peak emission wavelength
Spectral half band width
PO
λP
∆λ
Forward voltage (DC)
Reverse current (DC)
VF
IR
Capacitance between pins
Rise time
Fall time
LN151F
Half-power angle
LN151L
Ct
tr
tf
θ
Conditions
IF = 100mA
IF = 100mA
IF = 100mA
IF = 100mA
VR = 3V
VR = 0V, f = 1MHz
IFP = 100mA
The angle in which radiant intencity is 50%
21
ø5.75 max.
1: Anode
2: Cathode
min typ max Unit
5 7.5
mW
950 nm
50 nm
1.3 1.6
V
10 µA
60 pF
1 µs
1 µs
32 deg.
8 deg.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LN151.PDF ] | |
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