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PDF LN159 Data sheet ( Hoja de datos )
| Número de pieza | LN159 | |
| Descripción | GaAs Bi-directional Infrared Light Emitting Diode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LN159 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
For light source of VCR (VHS System)
8˚
8˚
Unit : mm
Features
Two-way directivity
High-power output, high-efficiency : PO = 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Thin type package modified from LN59
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
2.8±0.2
2-C0.5
2.8±0.2
1.3±0.2
ø1.4±0.2
2-R0.7
0.15
2-0.7 max.
2-0.5±0.1
2
1
2.0
0.5±0.1
1: Anode
2: Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol
PD
IF
IFP*
VR
Topr
Tstg
Ratings
75
50
1
3
–25 to +65
– 30 to +85
Unit
mW
mA
A
V
˚C
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Radiant intensity at center
Ie* IF = 50mA
Peak emission wavelength
λP IF = 20mA
Spectral half band width
∆λ IF = 20mA
Forward voltage (DC)
VF IF = 50mA
Reverse current (DC)
IR VR = 3V
Capacitance between pins
Ct VR = 0V, f = 1MHz
* Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.
I1 I2
min typ max Unit
1.2 mW/sr
940 nm
50 nm
1.3 1.5
V
10 µA
35 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LN159.PDF ] | |
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