(PDF) LN162S Datasheet - GaAs Infrared Light Emitting Diode

Número de pieza	LN162S
Descripción	GaAs Infrared Light Emitting Diode
Fabricantes	Panasonic Semiconductor
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No Preview Available ! Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature * f = 100 Hz, Duty cycle = 0.1 % Symbol Ratings PD 75 IF 50 IFP* 1 VR 3 Topr –25 to +85 Tstg –30 to +100 Unit mW mA A V ˚C ˚C ø3.0±0.15 Unit : mm ø0.3±0.05 ø0.45±0.05 0.9±0.15 21 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min typ max Unit 1.5 3.5 mW 950 nm 50 nm 1.2 1.5 V 10 µA 50 pF 80 deg. 1 1 page

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PDF LN162S Data sheet ( Hoja de datos )