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Panasonic Semiconductor - GaAlAs Infrared Light Emitting Diode

Numéro de référence LN184
Description GaAlAs Infrared Light Emitting Diode
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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LN184 fiche technique
Infrared Light Emitting Diodes
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Features
High-power output, high-efficiency : PO = 5 mW (typ.)
Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.)
Infrared light emission close to monochromatics light : λP = 880 nm
(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
ø4.6±0.15
Unit : mm
Glass window
Spherical lens
2
2.45±0.25
2-ø0.45±0.05
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
PD 190 mW
Forward current (DC)
IF 90 mA
Pulse forward current
IFP* 230 mA
Reverse voltage (DC)
VR 3 V
Operating ambient temperature Topr –25 to +85 ˚C
Storage temperature
Tstg – 40 to +100 ˚C
* Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
ø4.0±0.1
ø5.75max.
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Symbol
PO
λP
∆λ
VF
IR
tr
tf
θ
Conditions
IF = 100mA
IF = 100mA
IF = 100mA
IF = 100mA
VR = 3V
IFP = 100mA
IFP = 100mA
The angle in which radiant intencity is 50%
min typ max Unit
3.5 mW
880 nm
50 nm
1.55 1.9
V
10 µA
20 ns
20 ns
20 deg.
1

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