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GTM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GJ405
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GJ405 fiche technique
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Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GJ405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
32m
-18A
Description
The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate
resistance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited
for high current load applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-30
±20
-18
-14
-40
60
0.4
61
-35
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.5
50
Unit
/W
/W
GJ405
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