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PDF SPI10N10 Data sheet ( Hoja de datos )
| Número de pieza | SPI10N10 | |
| Descripción | SIPMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Preliminary data
SPI10N10
SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
P-TO262-3-1
dv/dt rated
Product Summary
VDS
RDS(on)
ID
100
170
10.3
V
m
A
P-TO263-3-2
P-TO220-3-1
Type
SPP10N10
SPB10N10
SPI10N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4118
Q67042-S4119
Q67042-S4120
Marking
10N10
10N10
10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
ID
Pulsed drain current
ID puls
TC=25°C
Avalanche energy, single pulse
ID=10.3 A , VDD=25V, RGS=25
EAS
Reverse diode dv/dt
dv/dt
IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
10.3
7.8
41.2
60
6
±20
50
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-31
1 page  
Preliminary data
SPI10N10
SPP10N10,SPB10N10
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
25
hg
A
15
VGS[V]=
a= 5
b= 5.5
f c= 6
d= 6.5
e= 7
f= 8
g= 9
e h= 10
10 d
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
400
m
abc d
e
300
250
200
f VGS[V]=
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
g f= 8
g= 9
h h= 10
150
c
5
b
a
0
0 2 4 6 8 10 V 13
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
12
100
50
0
0 5 10 15 20 25 A 35
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
7
AS
5
8
4
6
3
4
2
2
1
0
0 1 2 3 4 5V 7
VGS
Page 5
0
0 1 2 3 4 5 6 7 8 A 10
ID
2002-01-31
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI10N10.PDF ] | |
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