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PDF SPI12N50C3 Data sheet ( Hoja de datos )
| Número de pieza | SPI12N50C3 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.38
11.6
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO262
P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
2
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
3
12
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP12N50C3
SPB12N50C3
SPI12N50C3
SPA12N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4579
P-TO263-3-2 Q67040-S4641
P-TO262
Q67040-S4578
P-TO220-3-31 Q67040-S4577
Marking
12N50C3
12N50C3
12N50C3
12N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B_I SPA
11.6
7
34.8
340
11.61)
71)
34.8
340
0.6 0.6
11.6
11.6
±20 ±20
±30 ±30
125 33
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-29
1 page  
1 Power dissipation
Ptot = f (TC)
SPP12N50C3
140
W
120
110
100
90
80
70
60
50
40
30
20
10
00
20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
2 Power dissipation FullPAK
Ptot = f (TC)
36
W
28
24
20
16
12
8
4
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
DC
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
tp = 10 ms
DC
10
-2
10
0
10 1
10 2 V 10 3
10
-2
10
0
10 1
10 2 V 10 3
VDS
VDS
Rev. 2.1
Page 5
2004-03-29
5 Page 
P-TO-220-3-1
10 ±0.4
3.7 ±0.2
A
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
B
1.27±0.13
4.44
0.05
C
2x 2.54
3x
0.75 ±0.1
1.17 ±0.22
0.25 M A B C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
P-TO-263-3-2 (D2-PAK)
0.5 ±0.1
2.51±0.2
Rev. 2.1
Page 11
2004-03-29
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SPI12N50C3.PDF ] | |
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