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Numéro de référence | G2302 | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | GTM | ||
Logo | |||
1 Page
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Pb Free Plating Product
ISSUED DATE :2004/07/06
REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
85m
3.2A
Description
The G2302 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Capable of 2.5V gate drive
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA =25
ID @TA =70
IDM
PD @TA =25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
20
12
3.2
2.6
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4
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Pages | Pages 4 | ||
Télécharger | [ G2302 ] |
No | Description détaillée | Fabricant |
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G2302 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
G2303 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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