DataSheetWiki


G2302 fiches techniques PDF

GTM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence G2302
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





1 Page

No Preview Available !





G2302 fiche technique
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/07/06
REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
85m
3.2A
Description
The G2302 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Capable of 2.5V gate drive
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA =25
ID @TA =70
IDM
PD @TA =25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
20
12
3.2
2.6
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4

PagesPages 4
Télécharger [ G2302 ]


Fiche technique recommandé

No Description détaillée Fabricant
G2300 CMOS Positive Voltage Regulator GTM
GTM
G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM
G2302 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM
G2303 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche