(PDF) G2304A Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	G2304A
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/21 REVISED DATE : G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 117m 2.5A Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2304A is universally used for all commercial-industrial applications. Features Simple Drive Requirement Small Package Outline Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0 10 Ratings 30 20 2.5 2 10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Unit /W 1/4 1 page

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PDF G2304A Data sheet ( Hoja de datos )