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GTM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence G2310
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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G2310 fiche technique
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Pb Free Plating Product
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
G2310
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
60V
90m
3A
Description
The G2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The G2310 is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
60
20
3.0
2.3
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4

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