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GTM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence G3314
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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G3314 fiche technique
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Pb Free Plating Product
CORPORATION ISSUED DATE :2005/03/04
REVISED DATE :
G3314
BVDSS
-30V
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
RDS(ON)
ID
240m
-1.9A
Description
The G3314 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Low On-resistance
*Ultrahigh-speed switching
*4V drive
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-30
20
-1.9
-1.5
-10
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Ratings
90
Unit
/W
1/4

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