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G9015 fiches techniques PDF

GTM - PNP EPITAXIAL TRANSISTOR

Numéro de référence G9015
Description PNP EPITAXIAL TRANSISTOR
Fabricant GTM 
Logo GTM 





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G9015 fiche technique
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G9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/18
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
Min.
-50
-45
-5
-
-
-
-
-0.6
*hFE
fT
Cob
100
100
-
Ta = 25
Typ.
-
-
-
-
-
-0.20
-0.82
-0.65
200
190
4.5
Max.
-
-
-
-50
-50
-0.7
-1.0
-0.75
600
-
7
Classification Of hFE
Rank
hFE
B
100 - 300
C
200 - 600
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-50
-45
-5
-100
450
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
1/3

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