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GTM - Silicon Schottky Barrier Double Diodes

Numéro de référence GBAT54
Description Silicon Schottky Barrier Double Diodes
Fabricant GTM 
Logo GTM 





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GBAT54 fiche technique
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G B AT 5 4 / A/ C / S
Description
Silicon Schottky Barrier Double Diodes .
Package Dimensions
1/2
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge Forward Current
Total Power Dissipation at Ta = 25
Characteristics at Ta = 25
Symbol
Tj
Tstg
PD
characteristics
Reverse breakdown voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recover Time
Symbol
V(BR)R
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CT
Trr
Min
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Style : Pin 1.Anode 2.Cathode 3.Common Connection
Ratings
+125
-65 ~ +125
30
200
300
600
230
Unit
V
mA
mA
mA
mW
Unit
V
mV
mV
mV
mV
mV
uA
pF
ns
Test Conditions
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA, RL=100 measured at IR=1mA

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