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GE13005 fiches techniques PDF

GTM - NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Numéro de référence GE13005
Description NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Fabricant GTM 
Logo GTM 





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GE13005 fiche technique
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ISSUED DATE :2005/01/12
REVISED DATE :
GE13005
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Description
The GE13005 is designed for electronic transformers and power switching circuit applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation at Tc=25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
+150
-55 ~ +150
700
400
9
4
75
Unit
V
V
V
A
W
Electrical Characteristics(Tc = 25
Parameter
Symbol
Collector-Emitter Sustaining Voltage
VCEO(sus)
Collector-Base Breakdown Voltage
BVCBO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cutoff Current
ICBO
Collector-Emitter Cutoff Current
ICEO
Emitter-Base Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
*VCE(sat)1
*VCE(sat)2
Base-Emitter Saturation Voltage
*VBE(sat)
DC Current Gain
*HFE1
*HFE2
Frequency characteristics
fT
Turn-On Time
ton
Storage Time
tstg
Fall Time
tf
Unless otherwise specified)
Min. Typ. Max. Unit
Test Conditions
400 -
- V IC=10mA , IB=0
700 -
- V IC=1mA , IE=0
9 - - V IE=1mA , IC=0
- - 100 A VCB=700V
- - 50 A VCE=400V
- - 10 A VEB=7V
- - 0.8 V IC=1A, IB=200mA
- - 2.0 V IC=4A, IB=1A
- - 1.6 V IC=2A, IB=500mA
8 - 60
VCE=10V, IC=500mA
5 - 40
VCE=5V, IC=2A
4 - - MHz VCE=10V, IC=500mA, f=1MHz
- - 0.8
- - 4 s VCC=125V, IC=2A, IB1=IB2=0.4A
- - 0.9
*Pulse Test: Pulse Width=300 s, Duty Cycle
%
1/3

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