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Datasheet GE7805-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GE7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GE70L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/02B
GE70L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 9m 66A
The GE70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and  GTM mosfet | | |
| 2 | GE70N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/02/25 REVISED DATE :
GE70N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 9m 70A
The GE70N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 3 | GE70T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/02/25 REVISED DATE :2005/12/12B
GE70T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 10m 60A
The GE70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 4 | GE730 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/30 REVISED DATE :
GE730
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
400V 1.0 5.5A
The GE730 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect GTM mosfet | | |
| 5 | GE75N07 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/06/06 REVISED DATE :
GE75N07
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
75V 11m 80A
The GE75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 6 | GE75NF60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/12/01 REVISED DATE :
GE75NF60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 12m 75A
The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTM mosfet | | |
| 7 | GE75NF75 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/09/05 REVISED DATE :
GE75NF75
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
75V 11m 80A
The GE75NF75 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTM mosfet | |
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