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Número de pieza | GI01L60 | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | GTM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GI01L60 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Pb Free Plating Product
ISSUED DATE :2005/08/19
REVISED DATE :
GI01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
12
1A
Description
The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters.
Features
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600
30
1
0.8
3
29
0.232
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
4.3
110
Unit
/W
/W
GI01L60
Page: 1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet GI01L60.PDF ] |
Número de pieza | Descripción | Fabricantes |
GI01L60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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