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Numéro de référence | MG150J7KS60 | ||
Description | GTR MODULE SILICON N CHANNEL IGBT | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
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MG150J7KS60
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J7KS60 (600V/150A 7in1)
High Power Switching Applications
Motor Control Applications
· Integrates inverter and brake power circuit into a single package
· The electrodes are isolated from case.
· Low thermal resistance
· VCE (sat) = 1.6 V (typ.)
Equivalent Circuit
P
14
3
15 4
B
7 11
8 12
U
V
W
16 17 18 19
20
N
Signal Terminal
1. Open
5. Open
9. Open
13. Open
17. G (X)
2. Open
6. Open
10. Open
14. TH1
18. G (Y)
3. G (U)
7. G (V)
11. G (W)
15. TH2
19. G (Z)
4. E (U)
8. E (V)
12. E (W)
16. G (B)
20. E (L)
1 2001-10-03
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Pages | Pages 5 | ||
Télécharger | [ MG150J7KS60 ] |
No | Description détaillée | Fabricant |
MG150J7KS60 | GTR MODULE SILICON N CHANNEL IGBT | Toshiba Semiconductor |
MG150J7KS61 | High Power Switching Applications Motor Control Applications | Mitsubishi Electric |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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