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MG150J7KS60 fiches techniques PDF

Toshiba Semiconductor - GTR MODULE SILICON N CHANNEL IGBT

Numéro de référence MG150J7KS60
Description GTR MODULE SILICON N CHANNEL IGBT
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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MG150J7KS60 fiche technique
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MG150J7KS60
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J7KS60 (600V/150A 7in1)
High Power Switching Applications
Motor Control Applications
· Integrates inverter and brake power circuit into a single package
· The electrodes are isolated from case.
· Low thermal resistance
· VCE (sat) = 1.6 V (typ.)
Equivalent Circuit
P
14
3
15 4
B
7 11
8 12
U
V
W
16 17 18 19
20
N
Signal Terminal
1. Open
5. Open
9. Open
13. Open
17. G (X)
2. Open
6. Open
10. Open
14. TH1
18. G (Y)
3. G (U)
7. G (V)
11. G (W)
15. TH2
19. G (Z)
4. E (U)
8. E (V)
12. E (W)
16. G (B)
20. E (L)
1 2001-10-03

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