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Numéro de référence | SPI07N65C3 | ||
Description | Cool MOS Power Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
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SPP07N65C3, SPI07N65C3
SPA07N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
730
0.6
7.3
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
• Extreme dv/dt rated
2
• High peak current capability
• Improved transconductance
P-TO220-3-31
3
12
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP07N65C3
SPI07N65C3
SPA07N65C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4624
P-TO262-3-1 Q67040-S4623
P-TO220-3-31 Q67040-S4622
Marking
07N65C3
07N65C3
07N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=1.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=2.5A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
7.3 7.31)
4.6 4.61)
21.9
21.9
230 230
0.5 0.5
2.5 2.5
±20 ±20
±30 ±30
83 32
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 1.0
Page 1
2004-04-07
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Pages | Pages 14 | ||
Télécharger | [ SPI07N65C3 ] |
No | Description détaillée | Fabricant |
SPI07N65C3 | Cool MOS Power Transistor | Infineon Technologies |
SPI07N65C3 | Cool MOS Power Transistor | Infineon Technologies |
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