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GTM - NPN EPITAXIAL PLANAR TRANSISTOR

Numéro de référence GM2222A
Description NPN EPITAXIAL PLANAR TRANSISTOR
Fabricant GTM 
Logo GTM 





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GM2222A fiche technique
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GM2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Package Dimensions
1/2
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
Collector Current
Total Power Dissipation
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Ratings
+150
-55 ~ +150
75
40
6.0
600
1.2
Unit
V
V
V
mA
W
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
Test Conditions
IC=10uA
IC=10mA
IE=10uA
VCB=60V
VCB=60V,VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=20V, IC=20mA, f=100MHz

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