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MCR100-8 fiches techniques PDF

DnI - Standard Gate SCR

Numéro de référence MCR100-8
Description Standard Gate SCR
Fabricant DnI 
Logo DnI 





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MCR100-8 fiche technique
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Sensitive Gate
Silicon Controlled -
Rectifiers
Symbol
3. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 1.0 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
Pb - Free Packages are available
1.Cathode
2.Gate
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
MCR100-8
BVDRM = 600V
IT(RMS) = 1.0 A
ITSM = 10 A
TO-92
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC = 74 °C
180° Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
TA = 25 °C, pulse width 1.0
TA = 25 °C, t = 8.3ms
IFGM
Forward Peak Gate Current
TA = 25 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width 1.0
Ratings
600
0.6
1.0
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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