STP12NM50N Datasheet PDF - STMicroelectronics
| Part Number | STP12NM50N | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STB12NM50N - STD12NM50N
STF12NM50N - STP12NM50N
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
VDSS
(@Tjmax)
550V
550V
550V
550V
RDS(on)
<0.38Ω
<0.38Ω
<0.38Ω
<0.38Ω
ID
11A
11A
11A (1)
11A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
Marking
B12NM50N
D12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape & reel
Tape & reel
Tube
Tube
November 2006
Rev 7
1/18
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18
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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=250 V, ID= 5.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min Typ. Max Unit
15 ns
15 ns
60 ns
14 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=11A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
1.3 V
340 ns
3.5 µC
20 A
420 ns
4 µC
20 A
5/18
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP12NM50N electronic component. |
| Information | Total 18 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STP12NM50N.PDF Datasheet ] | |
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