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Numéro de référence | AO3400A | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Alpha & Omega Semiconductors | ||
Logo | |||
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AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400A is
Pb-free (meets ROHS & Sony 259 specifications).
FFeeaattuurreess
VVDDSS(V(V))==3300VV
IDID==51.17AA (V(VGGSS==1100VV) )
RRDDSS(O(ONN) )<<2164.5.5mmΩΩ((VVGGSS==1100VV))
RRDDSS(O(ONN) )<<3128mmΩΩ(V(VGGSS==44.5.5VV))
RDS(ON) < 48mΩ (VGS = 2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
S
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
5.7
4.7
25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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Pages | Pages 4 | ||
Télécharger | [ AO3400A ] |
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