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PDF 7N60A Data sheet ( Hoja de datos )
| Número de pieza | 7N60A | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
7N60A
7A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N60A is a high voltage N-Channel enhancement
mode power field effect transistors and is designed to have
minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. This power MOSFET is well suited for
high efficiency switch mode power supply.
FEATURES
* VDS = 600V
* ID = 7A
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60AL-TA3-T
7N60AG-TA3-T
7N60AL-TF1-T
7N60AG-TF1-T
7N60AL-TF3-T
7N60AG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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7N60A
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
RL
VDS 90%
VDD
D.U.T.
10%
VGS
tD(ON)
tR
Power MOSFET
tD(OFF)
tF
Switching Test Circuit
Switching Waveforms
Same Type
10V
50kΩ
as D.U.T.
12V 0.2μF
0.3μF
VDS
QGS
VGS
1mA
DUT
VGS
QG
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 7N60A.PDF ] | |
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