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PDF H6968CTS Data sheet ( Hoja de datos )
| Número de pieza | H6968CTS | |
| Descripción | Dual N-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
| Logotipo |  |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200610
Issued Date : 2006.06.01
Revised Date : 2006.06.28
Page No. : 1/4
H6968CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)
(Battery Switch, ESD Protected)
Features
• RDS(on)<32mΩ@VGS=2.5V, ID=5.5A
• RDS(on)<24mΩ@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
8-Lead Plastic TSSOP-8
Package Code: TS
H6968CTS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
RθJA
ESD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
Total Power Dissipation @TA=75oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
ESD Protect on Gate and Source
*1: Maximum DC current limited by the package under the ambient condition at room temperature.
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6.5
30
1.5
0.96
-55 to +150
83
2000
Units
V
V
A
A
W
W
°C
°C/W
V
H6968CTS
HSMC Product Specification
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet H6968CTS.PDF ] | |
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