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CEL - UPD5702

Numéro de référence D5702
Description UPD5702
Fabricant CEL 
Logo CEL 





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D5702 fiche technique
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NEC's 2.4 GHz
Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER:
POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz
• ON CHIP OUTPUT POWER CONTROL FUNCTION
• SINGLE SUPPLY VOLTAGE:
VDS = 3.0 V TYP
• PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as
a power amplifier up to 2.4 GHz application. This IC consists of
two stage amplifiers. The device is packaged in a low cost,
surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack-
age. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
INTERNAL BLOCK DIAGRAM
Pout2 1
Pout2 2
GND 3
Pin1 4
8 Pin2
7 Pin2
6 GND
5 Pout1
APPLICATIONS
• 1.9 GHZ Application Ex. PHS etc.
• 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.
• General purpose medium power AGC amplifier
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified)
SYMBOLS
IDS
VGS
POUT
PAE
Padj1
Padj2
IRL
ORL
ISOL
OBW
PART NUMBER
PARAMETERS AND CONDITIONS
Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm
Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm
Output Power, PIN = -5 dBm
Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm
Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm
Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm
Input Return Loss, PIN = -20 dBm
Output Return Loss, PIN = -20 dBm
Isolation, PIN = -20 dBm
Occupied Bandwidth, PIN = -5 dBm, POUT = +20.5 dBm
UNITS
mA
V
dBm
%
dBc
dBc
dB
dB
dB
dB
UPD5702TU
MIN TYP MAX
150
2.0
20.5
27
-61
-76
10
10
45
TBD
California Eastern Laboratories

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