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Samsung Electronics - Flash Memory

Numéro de référence K8A5615EBA
Description Flash Memory
Fabricant Samsung Electronics 
Logo Samsung Electronics 





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K8A5615ET(B)A
FLASH MEMORY
Document Title
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory
Revision History
Revision No. History
0.0 Advanced
Draft Date
March 15, 2004
Remark
Advance
0.1 Revision
- Change the speed code
7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz
June 1, 2004
Preliminary
0.2 Revision
- Change the device version ID
Top boot device : 22ECH --> 22FCH
Bottom boot device : 22EDH --> 22FDH
- Not support accelerated quad word program operation
July 5, 2004
Preliminary
0.3 Revision
- Change the initial access time of asynchronous read mode
K8A56156ET(B)A-DE7C
tAA : 70ns--->80ns
tCE : 70ns--->80ns
- Support accelerated quad word program operation
August 3, 2004
Preliminary
0.4 Revision
- Add the operation flow chart
August 23, 2004 Preliminary
0.5 Revision
September 6, 2004 Preliminary
- Add the description of range limitation of data read out during pro-
gram suspend.(Refer to "Program Suspend/Resume" paragragh)
0.6 Revision
December 13, 2004 Preliminary
- Add the requirement and note of Quadruple word program operation
1.0 Specification finalized
December 16, 2004
1 Revision 1.0
December, 2004

PagesPages 30
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