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PDF T2035H Data sheet ( Hoja de datos )

Número de pieza T2035H
Descripción High Temperature 20A Triacs
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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T2035H Series
Snubberless™ high temperature 20 A Triacs
Main features
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Tj MAX
Value
20
600
35
150
Unit
A
V
mA
°C
Description
Specifically designed to operate at 150° C, the
new 20 A T2035H Triacs provide an enhanced
performance in terms of power loss and thermal
dissipation. This facilitates the optimization of
heatsink dimensioning, leading to improved space
and cost effectiveness when compared to electro-
mechanical solutions.
Based on ST Snubberless™ technology, the
T2035H series offers high commutation switching
capabilities and high noise immunity levels on the
full range of Tj.
The T2035H series facilitates the optimization of
the control of universal motors and inductive
loads found in appliances such as vacuum
cleaners, and washing machines.
The T2035H Triacs are also suitable for use in
high temperature environment found in hot
appliances such as cookers, ovens, hobs, electric
heaters, and coffee machines.
A2
A2
G
A1 A2
D2PAK
T2035H-G
G
A2
A1
TO-220AB
T2035H-T
Order code
Part number
T2035H-600G
T2035H-600G-TR
T2035H-600TRG
Marking
T2035H-600G
T2035H-600G
T2035H-600T
TM: Snubberless is a trademark of STMicroelectronics
July 2006
Rev 1
1/10
www.st.com
10

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T2035H pdf
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T2035H Series
Characteristics
Figure 9. Relative variation of critical rate of Figure 10. Relative variation of critical rate of
decrease of main current (di/dt)c vs
decrease of main current (di/dt)c
reapplied (dV/dt)c
versus junction temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]
8
7
6
1.2 5
1.0 4
0.8
3
0.6
0.4 2
0.2
0.0
0.1
dV/dt (V/µs)
1.0 10.0
1 Tj(°C)
0
100.0
25 50 75 100 125 150
Figure 11. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
IDRM/IRRM(mA)
1.E+01
1.E+00
VDRM=VRRM=600 V
VDRM=VRRM=400 V
1.E-01
VDRM=VRRM=200 V
1.E-02
1.E-03
1.E-04
50
Tj(°C)
75 100 125 150
Figure 12. Acceptable repetitive peak off-state
voltage versus case-ambient
thermal resistance
Rth(c-a)(°C/W)
10
9
8
7
6
5
4
3
2
1
0
300
350
Rth(j-c)=1°C/W
TJ=150°C
VDRM/VRRM(V)
400 450 500 550 600
Figure 13. D2PAK junction to ambient thermal
resistance versus copper surface
under tab (PCB FR4, copper
thickness 35 µm)
Rth(j-a)(°C/W)
80
70
D²PAK
60
50
40
30
20
10
0
0
SCU(cm²)
5 10 15 20 25 30 35 40
5/10

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