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Infineon Technologies AG - SGB02N120

Numéro de référence GB02N120
Description SGB02N120
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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GB02N120 fiche technique
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SGP02N120, SGB02N120
SGD02N120
Fast IGBT in NPT-technology
40lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP02N120
SGB02N120
SGD02N120
VCE
IC
Eoff
Tj Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4270
TO-263AB(D2PAK) Q67040-S4271
TO-252AA(DPAK) Q67040-S4269
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2A, VCC = 50V, RGE = 25, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100V VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
1200
6.2
2.8
9.6
9.6
±20
10
10
62
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02

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