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Numéro de référence | GB02N120 | ||
Description | SGB02N120 | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
wwwww..DDaatataSSheheete4tU4.Uco.cmom
SGP02N120, SGB02N120
SGD02N120
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP02N120
SGB02N120
SGD02N120
VCE
IC
Eoff
Tj Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4270
TO-263AB(D2PAK) Q67040-S4271
TO-252AA(DPAK) Q67040-S4269
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
1200
6.2
2.8
9.6
9.6
±20
10
10
62
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
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Pages | Pages 12 | ||
Télécharger | [ GB02N120 ] |
No | Description détaillée | Fabricant |
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