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YG811S04R fiches techniques PDF

Fuji Electric - Silicon Diode

Numéro de référence YG811S04R
Description Silicon Diode
Fabricant Fuji Electric 
Logo Fuji Electric 





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YG811S04R fiche technique
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SCHOTTKY BARRIER DIODE
(40V / 5A TO-22OF15)
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1.2±0.2
0.7±0.2
5.08±0.4
JEDEC
EIAJ
0.6±0.2
2.7±0.2
SC-67
Connection Diagram
13
Item
Symbol
Conditions
Rating
Repetitive peak reverse voltage
VRRM
40
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=122°C
Square wave
Sine wave 10ms
48
1500
5
120
Operating junction temperature
Tj
-40 to +150
Storage temperature
Tstg
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=5.0A
Reverse current
IR VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Mechanical Characteristics
Max.
0.55
5.0
5.0
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
N·m
g

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