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9435GM Datasheet دیتاشیت PDF دانلود

دیتاشیت - SSM - SSM9435GM

شماره قطعه 9435GM
شرح مفصل SSM9435GM
تولید کننده SSM 
آرم SSM 


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9435GM شرح
SSM9435GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-30V
50m
-5.3A
Pb-free; RoHS-compliant SO-8
www.DataSheet4U.com
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9435GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as battery
management and general high-side switch circuits.
The SSM9435GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Value
-30
±20
-5.3
-4.7
-20
2.5
0.02
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
-55 to 150
-55 to 150
°C
°C
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
2/12/2006 Rev.3.01
www.SiliconStandard.com
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