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Elpida Memory - EDE5108AGBG

Numéro de référence E5108AGBG
Description EDE5108AGBG
Fabricant Elpida Memory 
Logo Elpida Memory 





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E5108AGBG fiche technique
DATA SHEET
512M bits DDR2 SDRAM
EDE5108AGBG (64M words × 8 bits)
Specifications
Density: 512M bits
Organization
16M words × 8 bits × 4 banks
Package: 60-ball FBGA
www.DataSheet4U.comLead-free (RoHS compliant)
Power supply: VDD, VDDQ = 1.8V ± 0.1V
Data rate: 667Mbps/533Mbps (max.)
1KB page size
Row address: A0 to A13
Column address: A0 to A9
Four internal banks for concurrent operation
Interface: SSTL_18
Burst lengths (BL): 4, 8
Burst type (BT):
Sequential (4, 8)
Interleave (4, 8)
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge option for each burst
access
Driver strength: normal/weak
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8μs at 0°C TC ≤ +85°C
3.9μs at +85°C < TC ≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
Double-data-rate architecture; two data transfers per
clock cycle
The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted /CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation
Document No. E0917E30 (Ver. 3.0)
Date Published September 2006 (K) Japan
Printed in Japan
URL: http://www.elpida.com
©Elpida Memory, Inc. 2006

PagesPages 30
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