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PDF FZ800R12KS4 Data sheet ( Hoja de datos )
| Número de pieza | FZ800R12KS4 | |
| Descripción | IGBT-Module | |
| Fabricantes | eupec GmbH | |
| Logotipo |  |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
www.DataSheet4UP.ecroiomdischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80°C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Vorläufige Daten
Preliminary data
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1200
800
1200
1600
6,9
+/- 20V
800
1600
185.000
2.500
V
A
A
A
kW
V
A
A
A2s
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 800 A, VGE = 15V, Tvj = 25°C
IC = 800 A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannunggate threshold voltage IC = 32 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VGE = -15V ... + 15V, VCE = 600V
VCE = 1200V, VGE = 0V, Tvj = 25°C
VCE = 1200V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: R. Jörke
approved by: Jens Thurau
date of publication : 2000-06-14
revision: 1
1 (9)
VCE sat
min.
-
-
typ.
3,00
3,60
max.
-
-
VGE(th)
4,5
5,5
6,5
V
V
V
Cies - 52 - nF
Cres
- t.b.d. -
nF
QG - 8,4 - µC
ICES
- t.b.d. -
µA
- t.b.d. -
mA
IGES
-
- 400 nA
FZ800R12KS4, preliminary.xls
15.06.00
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Vorläufige Daten
Preliminary data
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
1600
I C = f (VGE)
VCE = 20V
1400
www.DataSheet4U.com
1200
1000
T = 25°C
T = 125°C
800
600
400
200
0
5 6 7 8 9 10 11 12
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
1600
I F = f (VF)
1400
1200
Tj = 25°C
Tj = 125°C
1000
800
600
400
200
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VF [V]
5 (9)
FZ800R12KS4, preliminary.xls
15.06.00
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FZ800R12KS4.PDF ] | |
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