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SPI80N06S2L-05 fiches techniques PDF

Infineon Technologies - OptiMOS Power-Transistor

Numéro de référence SPI80N06S2L-05
Description OptiMOS Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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SPI80N06S2L-05 fiche technique
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OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
P- TO262 -3-1
SPI80N06S2L-05
SPP80N06S2L-05,SPB80N06S2L-05
Product Summary
VDS 55 V
RDS(on) max. SMD version 4.5 m
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N06S2L-05
SPB80N06S2L-05
SPI80N06S2L-05
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67040-S4246
Q67040-S4256
Q67060-S7422
Marking
2N06L05
2N06L05
2N06L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
800
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09

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