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Numéro de référence | SPI80N06S-08 | ||
Description | OptiMOS Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
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SIPMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
P-TO263-3-2
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
7.7 mΩ
80 A
P-TO262-3-1
P-TO220-3-1
• Repetive Avalanche up to
Tjmax = 175 °C
• dv /dt rated
VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code Marking
Q670T6C0=-S2651°8C5, V GS1=N10060V8
Q670T6C0=-S160108°7C, V 1GSN=016008V
Q67060-S6186 1N0608
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current1)
I D T C=25 °C, V GS=10 V
80 A
T C=100 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω,
V DD=25 V
Avalanche energy, periodic2)
E AR T j≤175 °C
Reverse diode dv /dt 2)
dv /dt
I D=80 A, V DS=40 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
80
320
700 mJ
30
6 kV/µs
±20
300
-55 ... +175
55/175/56
V
W
°C
2004-11-30
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Pages | Pages 8 | ||
Télécharger | [ SPI80N06S-08 ] |
No | Description détaillée | Fabricant |
SPI80N06S-08 | OptiMOS Power-Transistor | Infineon Technologies |
SPI80N06S-08 | Power-Transistor | Infineon Technologies |
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