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Numéro de référence | P2003EVG | ||
Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
Fabricant | Niko | ||
Logo | |||
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2003EVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 20m
ID
-9A
D
G
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
S
www.DataShAeBetS4UO.cLoUmTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
LIMITS
-30
±20
-9
-8
-50
2.5
1.3
-55 to 150
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Case
RθJc
25 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
50 °C / W
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-30
-1 -1.5
-3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
-1
µA
-10
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -9A
VDS = -10V, ID = -9A
-50
25
15
24
A
35
m
20
S
OCT-20-2004
1
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Pages | Pages 5 | ||
Télécharger | [ P2003EVG ] |
No | Description détaillée | Fabricant |
P2003EV | P-Channel Enhancement Mode MOSFET | UNIKC |
P2003EV8 | P-Channel Enhancement Mode MOSFET | UNIKC |
P2003EVG | P-Channel Enhancement Mode MOSFET | UNIKC |
P2003EVG | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Niko |
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