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Numéro de référence | AON7400 | ||
Description | Field Effect Transistor | ||
Fabricant | Alpha & Omega Semiconductors | ||
Logo | |||
1 Page
AON7400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in SMPS and
www.DataSheet4gUe.cnoemral purpose applications. Standard Product
AON7400 is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS (V) = 30V
ID = 10A
(VGS = 10V)
RDS(ON) < 12.5mΩ (VGS = 10V)
RDS(ON) < 14.5mΩ (VGS = 4.5V)
Top View
DFN 3x3
Bottom View
Pin 1
D
SD
SD
SD
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current G
TA=25°C
TA=70°C
IDSM
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
20
16
80
10
9
35
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
3
Max
40
75
3.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
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Pages | Pages 4 | ||
Télécharger | [ AON7400 ] |
No | Description détaillée | Fabricant |
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