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Numéro de référence | IRFW540A | ||
Description | Advanced Power MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
Advanced Power MOSFET
IRFW/I540A
FEATURES
www.DataSheet4U.com
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175℃ Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.041 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25℃) *
Total Power Dissipation (TC=25℃)
Linear Derating Factor
③
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.052 Ω
ID = 28 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.4
40
62.5
Units
℃/W
Rev. B1
2001 Fairchild Semiconductor Corporation
1
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Pages | Pages 7 | ||
Télécharger | [ IRFW540A ] |
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