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Numéro de référence | FMBM5401 | ||
Description | PNP General Purpose Amplifier | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FMBM5401
PNP General Purpose Amplifier
• This device has matched dies in SuperSOT-6.
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C2
E1
C1
B2
E2
pin #1 B1
SuperSOTTM-6
Mark: .4S2
Absolute Maximum Ratings*
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
-150
-160
-5.0
-600
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics*
IC = -1.0mA, IB = 0
IC = -100µA, IE = 0
IC = -10µA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, Ta = 100°C
VEB = -3.0V, IC = 0
hFE1
DIVID1
hFE2
DIVID2
hFE3
DIVID3
DC Current Gain
Variation Ratio of hFE1 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of hFE2 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of hFE3 Between Die 1 and Die 2
VCE = -5V, IC = -1mA
hFE1(Die1)/hFE1(Die2)
VCE = -5V, IC = -10mA
hFE2(Die1)/hFE2(Die2)
VCE = -5V, IC = -50mA
hFE3(Die1)/hFE3(Die2)
Units
V
V
V
mA
°C
Min. Max Units
-150
-160
-5.0
-50
-50
-50
V
V
V
nA
µA
nA
50
0.9
60
0.95
50
0.9
1.1
240
1.05
1.1
©2005 Fairchild Semiconductor Corporation
FMBM5401 Rev. A
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FMBM5401 ] |
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