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FDS6688S fiches techniques PDF

Fairchild Semiconductor - 30V N-Channel PowerTrench SyncFET

Numéro de référence FDS6688S
Description 30V N-Channel PowerTrench SyncFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS6688S fiche technique
March 2004
FDS6688S
30V N-Channel PowerTrenchSyncFET
General Description
The FDS6688S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6688S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
www.DataSheet4U.cDoCm/DC converter
Motor drives
Features
16 A, 30 V.
RDS(ON) = 6.0 m@ VGS = 10 V
RDS(ON) = 7.5 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
DD
D
D
SO-8
S S SG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6688S
FDS6688S
13’’
5
6
7
8
Ratings
30
±20
16
50
2.5
1.2
1
–55 to +125
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDS6688S Rev C (W)

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