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PDF D1862 Data sheet ( Hoja de datos )
| Número de pieza | D1862 | |
| Descripción | NPN Transistor - 2SD1862 | |
| Fabricantes | ROHM Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D1862 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistors
2SD1766 / 2SD1758 / 2SD1862
Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
!Features
1) Low VCE(sat).
www.DataSheet4U.com VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1188 /
2SB1182 / 2SB1240
!Structure
Epitaxial planar type
NPN silicon transistor
!External dimensions (Units : mm)
2SD1766
4.5+−00..21
1.6±0.1
1.5 −+00..12
2SD1758
6.5±0.2
5.1+−00..21
C0.5
2.3+−00..21
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4 −+00..015
Abbreviated symbol : DB∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD1862
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
32
Emitter-base voltage
VEBO
5
Collector current
2
IC
2.5
Collector
power
dissipation
2SD1766
2SD1758
2SD1862
0.5
2
PC
10
1
Junction temperature
Tj 150
Storage temperature
Tstg −55~+150
∗1 Single pulse, PW=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
Unit
V
V
V
A (DC)
A (Pulse) ∗1
W ∗2
W (TC=25°C)
W ∗3
°C
°C
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D1862.PDF ] | |
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