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PDF GA250TD120U Data sheet ( Hoja de datos )
| Número de pieza | GA250TD120U | |
| Descripción | HALF-BRIDGE IGBT DOUBLE INT-A-PAK | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• Standard: Optimized for minimum saturation
www.DataSheet4U.com voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50054A
GA250TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 250A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
250
500
500
500
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.10
0.20
—
4.0
3.0
—
Units
°C/W
N.m
g
1
4/24/2000
1 page  
80000
60000
www.DataSheet4U.com
40000
20000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
0
1 10 100
VCE, Collector-to-Emitter Voltage (V)
( ° C)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA250TD120U
20 VCC = 400V
I C = 297A
15
10
5
0
0
500
1000
1500
2000
2500
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
200
VCC = 720V
VGE = 15V
180
TJ
IC
= 12255 °C
= 250A
160
140
120
100
80
0
10 20 30 40 50
RRGG
,
,
Gate Resistance
Gate Resistance (
(O(hΩm)
Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1000 RGG1=1=511Ω55;ORΩhGm2 = 0 Ω
VGE = 15V
VCC = 720V
100
IC = 500A
IC = 250A
IC = 125A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GA250TD120U.PDF ] | |
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