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BTD2150AE3 fiches techniques PDF

Cystech Electonics - NPN Epitaxial Planar Transistor

Numéro de référence BTD2150AE3
Description NPN Epitaxial Planar Transistor
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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BTD2150AE3 fiche technique
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AE3
Features
Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA
Excellent current gain characteristics
www.DataSheCet4oUm.cpomlementary to BTB1424AE3
Spec. No. : C848E3
Issued Date : 2004.07.06
Revised Date :
Page No. : 1/5
Symbol
BTD2150AE3
Outline
TO-220AB
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation (TA=25)
Power Dissipation (TC=25)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
Note : Pulse test, pulse width380µs, duty cycle2%.
BTD2150AE3
BCE
Limits
80
50
6
3
7 (Note)
1
1.8
25
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
CYStek Product Specification

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