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Datasheet BTD2444S3-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BTD1383L3 | NPN Epitaxial Planar Transistor CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4
BTD1383L3
Description
• The BTD1383L3 is a darlington amplifier transistor.
Symbol
BTD1383L3 B C
Outline
SOT-223
C
E
B：Base C：Collector E：  Cystech Electonics transistor | | |
| 2 | BTD1383M3 | General Purpose NPN Epitaxial Planar Transistor CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214M3 Issued Date : 2006.11.10 Revised Date : Page No. : 1/5
BTD1383M3
Description
• The BTD1383M3 is a darlington amplifier transistor. • Pb-free package
Symbol
BTD1383M3 B C
Outline
S  Cystech Electonics Corp transistor | | |
| 3 | BTD1664M3 | Low Vcesat NPN Epitaxial Planar Transistor CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date : Page No. : 1/4
BTD1664M3
Features
• The BTD1664M3 is designed for general purpose low frequency power amplifier applications. • Low VCE(sat), VCE( Cystech Electonics Corp transistor | | |
| 4 | BTD1758J3 | NPN Epitaxial Planar Transistor CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C842J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4
BTD1758J3
Features
• Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A • Excellent current gain characteristics • Complementary to BTB11 Cystech Electonics transistor | | |
| 5 | BTD1760J3 | NPN Epitaxial Planar Transistor CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2005.10.04 Page No. : 1/5
BTD1760J3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complement Cystech Electonics transistor | | |
| 6 | BTD1766M3 | NPN Epitaxial Planar Transistor CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C842M3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4
BTD1766M3
Features
• Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A • Excellent current gain characteristics • Complementary to BTB11 Cystech Electonics transistor | | |
| 7 | BTD1768A3 | NPN Epitaxial Planar Transistor CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 1/4
BTD1768A3
Description
The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application.
Featur Cystech Electonics transistor | |
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