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PDF W60N10 Data sheet ( Hoja de datos )
| Número de pieza | W60N10 | |
| Descripción | STW60N10 | |
| Fabricantes | STMicroelectronics | |
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STH60N10/FI
STW60N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STH60N10
www.DataSheet4U.ScoTmH 60N1 0F I
STW60N10
VDSS
100 V
100 V
100 V
R DS( on)
< 0.025 Ω
< 0.025 Ω
< 0.025 Ω
ID
60 A
36 A
60 A
s TYPICAL RDS(on) = 0.02 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-247
3
2
1
TO-218
33
22
1
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1993
Val ue
STH/STW60N10 STH60N10FI
100
100
± 20
60 36
42 22
240 240
200 70
1. 33
0. 56
4000
-65 to 175
-65 to 150
175 150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/11
1 page  
Transconductance
STH60N10/FI STW60N10
Static Drain-source On Resistance
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/11
5 Page 
www.DataSheet4U.com
STH60N10/FI STW60N10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet W60N10.PDF ] | |
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