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A950 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SA950

شماره قطعه A950
شرح مفصل 2SA950
تولید کننده Toshiba 
آرم Toshiba 


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A950 شرح
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA950
2SA950
Audio Power Amplifier Applications
Unit: mm
· High hFE: hFE = 100~320
· 1 W output applications
· Complementary to 2SC2120
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-35
-30
-5
-800
-160
600
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCB = -35 V, IE = 0
VEB = -5 V, IC = 0
V (BR) CEO IC = -10 mA, IB = 0
hFE (1)
VCE = -1 V, IC = -100 mA
(Note)
hFE (2)
VCE (sat)
VCE = -1 V, IC = -700 mA
IC = -500 mA, IB = -20 mA
VBE VCE = -1 V, IC = -10 mA
fT VCE = -5 V, IC = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Min Typ. Max Unit
¾ ¾ -0.1 mA
¾ ¾ -0.1 mA
-30 ¾
¾
V
100 ¾ 320
35 ¾ ¾
¾
¾ -0.7
V
-0.5
¾ -0.8
V
¾ 120 ¾ MHz
¾ 19 ¾ pF
1 2003-03-24

قانون اساسیصفحه 3
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