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PDF STP6NM60N Data sheet ( Hoja de datos )
| Número de pieza | STP6NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD6NM60N - STD6NM60N-1
STF6NM60N - STP6NM60N
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
ID
STD6NM60N
STD6NM60N-1
STF6NM60N
STP6NM60N
650V
650V
650V
650V
<0.92Ω
<0.92Ω
<0.92Ω
<0.92Ω
4.6A
4.6A
4.6A (1)
4.6A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This device is realized with the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
Application
■ Switching applications
3
2
1
TO-220
3
1
DPAK
3
2
1
TO-220FP
3
2
1
IPAK
Internal schematic diagram
Order codes
Part number
STD6NM60N-1
STD6NM60N
STF6NM60N
STP6NM60N
Marking
D6NM60N
D6NM60N
F6NM60N
P6NM60N
Package
IPAK
DPAK
TO-220FP
TO-220
Packaging
Tube
Tape & reel
Tube
Tube
June 2007
Rev 2
1/17
www.st.com
17
1 page  
STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
Electrical characteristics
www.DataSheet4U.com
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 300V, ID = 2.3A,
RG= 4.7Ω, VGS = 10V
(see Figure 17)
Min. Typ. Max. Unit
10 ns
8 ns
40 ns
9 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4.6A, VGS=0
ISD= 4.6A,
di/dt = 100A/µs,
VDD=20V, Tj= 25°C
(see Figure 19)
ISD= 4.6A,
di/dt = 100A/µs,
VDD=20V, Tj= 150°C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
4.6 A
18.4 A
1.3 V
300 ns
2 µC
12 A
470 ns
3 µC
12 A
5/17
5 Page 
STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STP6NM60N.PDF ] | |
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