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STMicroelectronics - N-CHANNEL MOSFET

Numéro de référence STP6NS25
Description N-CHANNEL MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STP6NS25 fiche technique
STP6NS25
N-CHANNEL 250V - 0.9- 6A TO-220
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP6NS25
250 V < 1.1
6A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.9
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
November 2002
Value
250
250
± 20
6
4
24
70
0.56
5
–65 to 150
150
(1) ISD6A, di/dt300 A/µs, VDDV(BR)DSS, TjTjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8

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