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PDF AO4404B Data sheet ( Hoja de datos )

Número de pieza AO4404B
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AO4404B
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
www.DataSheet4oUp.ceormation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. Standard Product
AO4404B is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
RDS(ON) < 24m(VGS = 10V)
RDS(ON) < 30m(VGS = 4.5V)
RDS(ON) < 48m(VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
S
S
G
SOIC-8
D
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.1
60
2.8
1.8
15
34
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
37
70
26
Max
45
100
36
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W

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